Nonlinear traveling-wave field effect transistors for amplification of short electrical pulses
نویسندگان
چکیده
We investigated the properties of pulse propagation on nonlinear traveling-wave field effect transistors (TW-FET) to develop a method for amplifying short electrical pulses. TW-FETs are a special type of FET whose electrodes are employed not only as electrical contacts but also as transmission lines. Due to the presence of electromagnetic couplings between the gate and drain lines, two different propagation modes called the c mode and π mode are developed on a TW-FET. Moreover, the Schottky contact beneath the gate electrode creates an ideal source of nonlinearity for soliton-like propagation. We can design the TW-FET to amplify only soliton-like pulses carried by one of the two modes and attenuate the ones carried by the other mode. This paper discusses the fundamental properties of a nonlinear TWFET, including the width and velocity of a soliton-like pulse carried by c and π modes, and gives design criteria of amplification of soliton-like pulses.
منابع مشابه
Generation of short electrical pulses using nonlinear traveling-wave field effect transistors
We investigated the properties of pulse propagation on nonlinear traveling-wave field effect transistors (TWFET) in order to develop a method for generating short electrical pulses. We considered the case where a decreasing voltage pulse is applied to the gate line and an increasing one is simultaneously applied to the drain line. By properly designing the top and bottom levels of the applied p...
متن کاملExperimental Observation of Linear and No- Nlinear Pulses in Traveling-wave Field-effe- Ct Transistors Periodically Loaded with S- Chottky Varactors
We characterize the pulse propagation on a travelingwave field-effect transistor (TWFET) with the drain line periodically loaded with Schottky varactors for short pulse amplification. Owing to the coupling between the gate and drain lines, two propagation modes are developed on a TWFET. It is expected that the pulses carried by one of the two modes are uniquely amplified, whereas those carried ...
متن کاملCharacterization of Two-dimensional Left- Handed Traveling-wave Field-effect Tran- Sistors
The characteristics of a two-dimensional (2D) left-handed traveling-wave field-effect transistor, which is two 2D composite rightand left-handed (CRLH) transmission lines with both passive and active couplings, are discussed for generating non-attenuated waves having left-handedness in 2D. In this study, the design criteria for wave amplification are described, and the results from numerical ca...
متن کاملInvestigating the changes of electrical characteristics of Bipolar Junction Transistors, before and after gamma irradiation
Bipolar junction transistors (BJTs) are active semiconductor devices commonly used for amplification and switching applications. In this study, transistors have been biased to operate in active region and by measuring the electrical characteristics of BJTs, the effect of gamma irradiation on each of these characteristics was investigated before and after the gamma irradiation by 60Co source. In...
متن کاملFully Distributed Modeling, Analysis and Simulation of an Improved Non-Uniform Traveling Wave Structure
Modeling and simulation of communication circuits at high frequency are important challenges ahead in the design and construction of these circuits. Knowing the fact that the lumped element model is not valid at high frequency, distributed analysis is presented based on active and passive transmission lines theory. In this paper, a lossy transmission line model of traveling wave switch (TWSW) i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 7 شماره
صفحات -
تاریخ انتشار 2010